1998 |
Comment on "STM studies of initial In growth on Si(001)2x1: the In ad-dimer chain and its I-V characteristics" H. W. Yeom [Surface Science 415, 299 (2 citation)(1998)] |
1997 |
Electronic structures of the Si(001)2x3-In surface H. W. Yeom, T. Abukawa, Y. Takakuwa, Y. Mori, T. Shimatani, A. Kakizaki, and S. Kono [Physical Review B 55, 15669 (15 citations)(1997)] |
1997 |
Existence of a stable intermixing phase for monolayer Ge on Si(001) H. W. Yeom, M. Nakamura, T. Abukawa, M. Sasaki, S. Suzuki, S. Sato, and S. Kono [Surface Science 381, L533 (33 citations)(1997)] |
1997 |
Surface core levels of the 3C-SiC(001)3x2 surface;Atomic origins and surface reconstruction H. W. Yeom, Y.C. Chao, S. Terada, S. Hara, S. Yoshida and R.I.G. Uhrberg [Physical Review B 56, R15525 (28 citations)(1997)] |
1996 |
Surface core levels of In adsorption on Si(001)2x1 H. W. Yeom, T. Abukawa, Y. Takakuwa, Y. Mori, T. Shimatani, A. Kakizaki, and S. Kono [Physical Review B 54, 4456 (35 citations)(1996)] |
1996 |
Multiple scattering study of synchrotron radiation phtoelectron diffraction from Si(001)2x2-In surface X. Chen, H. W. Yeom, T. Abukawa, Y. Takakuwa, T. Shimatani, Y. Mori, A. Kakizaki, S. Kono [Journal of Electron Spectroscopy and Related Phenomena 80, 147 (7 citations)(1996)] |
1996 |
An angle-resolved phtoelectron spectroscopy study of the electronic structures of Si(001) 2x2-Al and -In surfaces H. W. Yeom, T. Abukawa, Y. Takakuwa, M. Nakamura, M. Kimura, T. Shimatani, Y. Mori, A. Kakizaki, and S. Kono [Journal of Electron Spectroscopy and Related Phenomena 80, 177 (3 citations)(1996)] |
1996 |
Initial stage growth and interface formation of Al on Si(001)2x1 H. W. Yeom, T. Abukawa, Y. Takakuwa, M. Nakamura, M. Kimura, A. Kakizaki, and S. Kono [Surface Science 365 (6 citations)(1996)] |