Center for Artificial Low Dimensional Electronic Systems

Preparation of Stoichiometric GaN(0001)-1x1 during surface treatment

S. M. Widstrand, K. O. Nagnusson, M. I. Larsson, L. S. O. Johansson, J. B. Gustafsson, E. Moons, H. W. Yeom, H. Miki, and M. Oshima [MRS Internet Journal of Nitride Semiconductor Research 9, 4 (5 citations)(2004)]

Surface electronic structures of the Ca-induced reconstructions on Si(111)

Y. K. Kim, J. W. Kim, H. S. Lee, Y. J. Kim, and H. W. Yeom [Physical Review B 68, 245312 (12 citations)(2003)]

Metal-insulator transition in Au atomic chains on Si with two proximal bands

J. R. Ahn, H. W. Yeom, H. S. Yoon, and I.-W. Lyo [Physical Review Letters 91, 196403 (114 citations)(2003)]

Thermal decomposition of NH3 on the Si(100) surface

J. W. Kim and H. W. Yeom [Surface Science 546, L820-L828 (12 citations)(2003)]

Reinvestigation of the band structure of the Si(111)5x2-Au surface

I. Matsuda, M. Hengsberger, F. Baumberger, T. Greber, H. W. Yeom, and J. Osterwalder [Physical Review B 68, 195319 (18 citations)(2003)]

In √7x√3 on Si(111): a nearly free electron metal in two dimensions

E. Rotenberg, H. Koh, K. Rossnagel, H. W. Yeom, J. Schafer, B. Krenzer, M. Rocha, and S. D. Kevan [Physical Review Letters 91, 246404 (17 citations)(2003)]

High-resolution photoemission spectroscopy study of clean and Au-nanowire-decorated Si(5 5 12) surfaces

J. R. Ahn, W. H. Choi, Y. K. Choi, H. S. Lee, and H. W. Yeom [Physical Review B 68,165314 (9 citations)(2003)]

Mechanism of initial adsorption of NO on the Si(100) surface

Y. K. Kim, J. R. Ahn, W. H. Choi, H. S. Lee, and H. W. Yeom [Physical Review B 68, 075323 (7 citations)(2003)]