Center for Artificial Low Dimensional Electronic Systems

Nitrogen bonding structure in ultrathin silicon oxynitride films on Si(100) prepared by plasma nitridation

Y. K. Kim, H. S. Lee, H. W. Yeom, D. Y. Ryoo, S. B. Huh, J. G. Lee [Physical Review B 70, 165320 (25 citations)(2004)]

Preparation of stoichiometric GaN(0001)-1 x 1 studied with spectromicroscopy

S. M. Widstrand, K. O. Nagnusson, M. I. Larsson, L. S. O. Johansson, J. B. Gustafsson, E. Moons, H. W. Yeom, H. Miki, and M. Oshima [Surface Science 572, 409-417 (3 citation)(2004)]

Mechanism of gap opening in a triple-band Peierls system: In atomic wires on Si

J. R. Ahn, J. H. Byun, H. Koh, E. Rotenberg, S. D. Kevan, H. W. Yeom [Physical Review Letters 93 106401 (73 citations)(2004)]

Non-metallic nature of In-induced nanoclusters on Si(100)

J. R. Ahn, J. H. Byun, W. H. Choi, H. W. Yeom, H. Jeong, S. Jeong [Physical Review B 70, 113304 (14 citations)(2004)]

Ab initio study of incorporation of O-2 molecules into Si(001) surfaces: Oxidation by Si ejection

B. D. Yu, Y. J. Kim, J. Jeon, H. Kim, H. W. Yeom, I. W. Lyo, K. J. Kong, Miyamoto Y, Sugino O, Ohno T [Physical Review B 70, 033307 (14 citations)(2004)]

Direct evidence of the charge ordered phase transition of indium nanowires on Si(111)

S. Park, H. W. Yeom, S. H. Min, D. H. Park, and I.-W. Lyo [Physical Review Letters 93 106402 (51 citations)(2004)]

Electronic transition of Au-induced atomic chains on Si(5 5 12): a strong similarity with the Au/Si(5 5 7) system

J. R. Ahn, H. W. Yeom, E. S. Cho, and C. Y. Park [Physical Review B 69, 233311 (28 citations)(2004)]

Carbon bonding site in Si(001)c(4 x 4) prepared by hydrocarbon decomposition

J. R. Ahn, Y. K. Kim, H. S. Lee, and H. W. Yeom [Physical Review B 69, 233306 (12 citations)(2004)]