Center for Artificial Low Dimensional Electronic Systems

Auger electron diffraction study of the initial statge of Ge heteroepitaxy on Si(001)

M. Sasaki, T. Abukawa, H. W. Yeom, M. Yamada, S. Suzuki, S. Sato, and S. Kono [Applied Surface Science 82/83, 387 (53 citations)(1994)]

Surface electronic structure of single-domain Si(001)2x2-Al : an angle-resolved photoelectron spectroscopy study using synchrotron radiation

H. W. Yeom, T. Abukawa, Y. Takakuwa, M. Nakamura, M. Kimura, A. Kakizaki, and S. Kono [Surface Science 321, L177 (18 citations)(1994)]

Existence of metastable molecular precursor to dissociated oxygen chemisorption on Si(111) and Si(100) at 40K

J. M. Seo, K. J. Kim, H. W. Yeom, and Ch. Park [the Journal of Vacuum Science and Technology A 12, 255(1994)]

Interaction of low-energy oxygen ions with the Si(100) surface

J. W. Chung, D. H. Baek, B. O. Kim, H. W. Yeom, and C. Y. Kim [Physical Review B 45, 1705 (3 citations)(1992)]

Enhanced Raman scattering of silver benzenethiolate

T. G. Lee, H. W. Yeom, S.-J. Oh, K. Kim, and M. S. Kim [Chemical Physics Letters 163, 98(1989)]