Center for Artificial Low Dimensional Electronic Systems

Anisotropy of spin-orbit branching ratio in angle-resolved photoemission

H. W. Yeom, T. Abukawa, Y. Takakuwa, S. Fujimori, T. Okane, Y. Ogura, T. Miura , S. Sato, A. Kakizaki, and S. Kono [Surface Science 395, L236-L241 (18 citations)(1998)]

Adsorption of acetylene and ethylene on the Si(001)2x1 surface studied by NEXAFS and UPS

F. Matsui, H. W. Yeom, A. Imanish, K. Isawa, I. Matsuda and T. Ohta [Surface Science 401, L413 (52 citations)(1998)]

Surface structure of cesium adsorption on Si(001) 2x1 surface

H. Hamamatsu, H. W. Yeom, T. Yokoyama, T. Kayama, and T. Ohta [Physical Review B 57, 11883 (20 citations)(1998)]

Comment on "STM studies of initial In growth on Si(001)2x1: the In ad-dimer chain and its I-V characteristics"

H. W. Yeom [Surface Science 415, 299 (2 citation)(1998)]

Electronic structures of the Si(001)2x3-In surface

H. W. Yeom, T. Abukawa, Y. Takakuwa, Y. Mori, T. Shimatani, A. Kakizaki, and S. Kono [Physical Review B 55, 15669 (15 citations)(1997)]

Existence of a stable intermixing phase for monolayer Ge on Si(001)

H. W. Yeom, M. Nakamura, T. Abukawa, M. Sasaki, S. Suzuki, S. Sato, and S. Kono [Surface Science 381, L533 (33 citations)(1997)]

Surface core levels of the 3C-SiC(001)3x2 surface;Atomic origins and surface reconstruction

H. W. Yeom, Y.C. Chao, S. Terada, S. Hara, S. Yoshida and R.I.G. Uhrberg [Physical Review B 56, R15525 (28 citations)(1997)]

Surface core levels of In adsorption on Si(001)2x1

H. W. Yeom, T. Abukawa, Y. Takakuwa, Y. Mori, T. Shimatani, A. Kakizaki, and S. Kono [Physical Review B 54, 4456 (35 citations)(1996)]